VESD05A5A-HS3 document number 81250 rev. 1.3, 22-sep-08 vishay semiconductors www.vishay.com 1 19956 1 2 3 6 54 19957 1 for technical support, please contact: esd-protection@vishay.com 5-line esd-protection diode array in llp75 features ? ultra compact llp75-6a package ? 5-line esd-protection ? low leakage current i r < 0.1 a ? low load capacitance c d = 13 pf ? esd-immunity acc. iec 61000-4-2 15 kv contact discharge 15 kv air discharge ? working voltage range v rwm = 5 v ? lead (pb)-free component ? component in accordance to rohs 2002/95/ec and weee 2002/96/ec marking (example only) dot = pin 1 marking xx = date code yy = type code (see table below) ordering information package data * please see document ?vishay green and halogen-free definitions (5-2008)? http://www.vishay.com/doc?99902 21001 xx yy device name ordering code taped units per reel (8 mm tape on 7" reel) minimum order quantity VESD05A5A-HS3 VESD05A5A-HS3-gs08 3000 15000 device name package name type code weight molding compound flammability rating moisture sensitivity level soldering conditions VESD05A5A-HS3 llp75-6a ae 5 mg ul 94 v-0 msl level 1 (according j-std-020) 260 c/10 s at terminals www.datasheet.co.kr datasheet pdf - http://www..net/
www.vishay.com 2 document number 81250 rev. 1.3, 22-sep-08 VESD05A5A-HS3 vishay semiconductors for technical support, please contact: esd-protection@vishay.com absolute maximum ratings application note: a) with the VESD05A5A-HS3 5 different signal or data lines can be clamped to ground. due to the different clamping levels in forward and reverse direction the VESD05A5A-HS3 clamping behavior is bi directional and as ymmetrical (bias). b) if symmetrical clamping behaviour is required the VESD05A5A-HS3 can also be used as a bi directional sy mmetrical protection device protecting up to 4 lines. in this case pin no. 2 must not be connected. rating test condition symbol value unit peak pulse current bias-mode: each input (pin 1 - pin 6) to ground (pin 2); acc. iec 61000-4-5; t p = 8/20 s; single shot i ppm 2.5 a bisy-mode: each input (pin 1 - pin 6) to any other input pin. pin 2 not connected. acc. iec 61000-4-5; t p = 8/20 s; single shot i ppm 2.5 a peak pulse power bias-mode: each input (pin 1 - pin 6) to ground (pin 2); acc. iec 61000-4-5; t p = 8/20 s; single shot p pp 33 w bisy-mode: each input (pin 1 - pin 6) to any other input pin. pin 2 not connected. acc. iec 61000-4-5; t p = 8/20 s; single shot p pp 43 w esd immunity acc. iec61000-4-2; 10 pulses bias-mode: each input (pin 1 - pin 6) to ground (pin 2) contact discharge v esd 15 kv air discharge v esd 15 kv acc. iec 61000-4-2 ; 10 pulses bisy-mode: each input (pin 1 - pin 6) to any other input pin. pin 2 not connected. contact discharge v esd 10 kv air discharge v esd 10 kv operating temperature junction temperature t j - 40 to + 125 c storage temperature t stg - 55 to + 150 c l1 l2 l3 l4 l5 1995 8 1 2 3 6 54 l1 l2 l3 l4 19959 1 2 3 6 54 www.datasheet.co.kr datasheet pdf - http://www..net/
VESD05A5A-HS3 document number 81250 rev. 1.3, 22-sep-08 vishay semiconductors www.vishay.com 3 for technical support, please contact: esd-protection@vishay.com electrical characteristics ratings at 25 c, ambient temperature unless otherwise specified VESD05A5A-HS3 bias mode (between pin 1, 3, 4, 5 or 6 and pin 2) typical characteristics t amb = 25 c, unless otherwise specified parameter test conditions/remarks symbol min. ty p. max. unit protection paths number of lines which can be protected n lines 5 lines reverse stand off voltage at i r = 0.1 a v rwm 5v max. reverse current at v r = 5 v i r < 0.01 0.1 a reverse break down voltage at i r = 1 ma v br 66.77.5v reverse clamping voltage at i pp = 1 a v c 910v at i pp = i ppm = 2.5 a v c 12 13 v forward clamping voltage at i pp = 1 a v f 22.5v at i pp = i ppm = 2.5 a v f 3.2 4 v line capacitance at v r = 0 v; f = 1 mhz c d 13 15 pf at v r = 2.5 v; f = 1 mhz c d 8pf figure 1. esd discharge current wave form acc. iec 61000-4-2 (330 /150 pf) 0 % 20 % 40 % 60 % 8 0 % 100 % 120 % - 10 0 10 20 30 40 50 60 70 8 0 90 100 time (ns) discharge c u rrent i esd rise time = 0.7 ns to 1 ns 53 % 27 % 20557 figure 2. 8/20 s peak pulse current wave form acc. iec 61000-4-5 0 % 20 % 40 % 60 % 8 0 % 100 % 010203040 time ( s) i ppm 20 s to 50 % 8 s to 100 % 2054 8 www.datasheet.co.kr datasheet pdf - http://www..net/
www.vishay.com 4 document number 81250 rev. 1.3, 22-sep-08 VESD05A5A-HS3 vishay semiconductors for technical support, please contact: esd-protection@vishay.com figure 3. typical capacitance c d vs. reverse voltage v r figure 4. typical forward current i f vs. forward voltage v f figure 5. typical reverse voltage v r vs. reverse current i r 1994 8 v r ( v ) 04 3 2 1 14 16 12 c d (pf) 5 f = 1 mhz 2 10 8 6 4 0 19949 v f ( v ) 0.5 1 0. 8 0.7 0.6 0.01 100 10 1 0.1 0.001 i f (ma) 0.9 1.1 19950 i r ( a) 0.01 100 10 1 0.1 1 5 4 3 2 0 v r ( v ) 10 000 1000 7 6 8 figure 6. typical clamping volt age vs. peak pulse current i pp figure 7. typical clamping perf ormance at + 8 kv contact discharge (acc. iec 61000-4-2) figure 8. typical clamping performance at - 8 kv contact discharge (acc. iec 61000-4-2) 19951 i pp (a) 04 3 2 1 - 4 4 2 0 - 2 - 6 v c ( v ) 8 6 10 14 12 meas u red acc. iec 61000-4-5 ( 8 /20 s - w a v e form) for w ard re v erse 0.5 3.5 2.5 1.5 v c acc. iec 61000-4-2 + 8 k v contact discharge 19994 t (ns) 20 10 0 - 10 - 20 60 40 20 0 v c-esd ( v ) 30 8 0 100 40 8 0 70 60 50 90 acc. iec 61000-4-2 - 8 k v contact discharge 19995 t (ns) 20 10 0 - 10 - 8 0 0 - 20 - 40 - 60 - 100 v c-esd ( v ) 30 20 40 8 0 70 60 50 90 40 www.datasheet.co.kr datasheet pdf - http://www..net/
VESD05A5A-HS3 document number 81250 rev. 1.3, 22-sep-08 vishay semiconductors www.vishay.com 5 for technical support, please contact: esd-protection@vishay.com package dimensions in millimeter s (inches): llp75-6a figure 9. typical max. clamping voltage at esd contact discharge (acc. iec 61000-4-2) v c-esd 19954 10 5 0 0 150 100 50 - 50 v c-esd ( v ) 15 200 20 v esd (k v ) - 150 - 200 - 100 acc. iec 61000-4-2 contact discharge 1 8 05 8 www.datasheet.co.kr datasheet pdf - http://www..net/
www.vishay.com 6 document number 81250 rev. 1.3, 22-sep-08 VESD05A5A-HS3 vishay semiconductors for technical support, please contact: esd-protection@vishay.com ozone depleting substances policy statement it is the policy of vishay semiconductor gmbh to 1. meet all present and future national and international statutory requirements. 2. regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. it is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (odss). the montreal protocol (1987) and its london amendments (1990) intend to severely restrict the use of odss and forbid their use within the next ten years. various national and international initiatives are pressing for an earlier ban on these substances. vishay semiconductor gmbh has been able to use its policy of continuous improvements to eliminate the use of odss listed in the following documents. 1. annex a, b and list of transitional substances of the montreal protocol and the london amendments respectively. 2. class i and ii ozone depleting substances in the clean air act amendments of 1990 by the environmental protection agency (epa) in the usa. 3. council decision 88/540/eec and 91/690/eec annex a, b and c (transitional substances) respectively. vishay semiconductor gmbh can certify that our semi conductors are not manufactured with ozone depleting substances and do not co ntain such substances. we reserve the right to make changes to improve technical design and may do so without further notice. parameters can vary in different applications. all operating parameters must be validated for each customer application by the customer. should the buyer use vishay semiconductors products for any unintended or unauthorized application, the buyer shall indemnify vishay semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. vishay semiconductor gmbh, p.o.b. 3535, d-74025 heilbronn, germany www.datasheet.co.kr datasheet pdf - http://www..net/
document number: 91000 www.vishay.com revision: 18-jul-08 1 disclaimer legal disclaimer notice vishay all product specifications and data are subject to change without notice. vishay intertechnology, inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, ?vishay?), disclaim any and all liability fo r any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. vishay disclaims any and all li ability arising out of the use or application of any product describ ed herein or of any information provided herein to the maximum extent permit ted by law. the product specifications do not expand or otherwise modify vishay?s terms and conditions of purcha se, including but not limited to the warranty expressed therein, which apply to these products. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of vishay. the products shown herein are not designed for use in medi cal, life-saving, or life-sustaining applications unless otherwise expressly indicated. customers using or selling vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify vishay for any damages arising or resulting from such use or sale. please contact authorized vishay personnel to obtain written terms and conditions regarding products designed for such applications. product names and markings noted herein may be trademarks of their respective owners. www.datasheet.co.kr datasheet pdf - http://www..net/
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